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FJN5471
FJN5471
For Output Amplifier of Electronic Flash Unit
* High DC Currrent Gain * Low Collector-Emitter Saturation Voltage * High Performance at Low Supply Voltage
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.75 150 -55 ~ 150 Units V V V A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Emitter Voltage Emitter Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Collector Output Capacitance Test Condition IC=1mA, IB=0 IC=100A, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=0.5A IC=3A, IB=0.1A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz 150 25 700 1000 0.5 1.5 V V MHz pF Min. 20 7 0.1 0.1 Typ. Max. Units V V A A
Thermal Characteristics TC=25C unless otherwise noted
Symbol RjA Parameter Thermal Resistance, Junction to Ambient Max 165 Units C/W
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
FJN5471
Typical Characteristics
7
8
VCE=2V
6 7
IC[A], COLLECTOR CURRENT
5
IB=12mA IB=10mA IB=8mA IB=6mA IB=4mA
4
3
IC[A], COLLECTOR CURRENT
IB=14mA
6 5 4 3 2 1 0 0.0
Ta=125 C
o
25 C
o
-40 C
o
2
IB=2mA
1
0 0 1 2 3 4 5
0.2
0.4
0.6
0.8
1.0
1.2
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Base-Emitter On Voltage
Ta=125 C
1000
o
VCE=2V
1
IC=30IB
Ta=25 C Ta=-40 C
o
o
VCE(sat)[V], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
0.1
Ta=125 C Ta=25 C
o o
o
100
Ta=-40 C
0.01
10 0.1
1
10
100
1E-3 0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
10
80
VBE(sat)[V], SATURATION VOLTAGE
IC=30IB
IE=0,f=1MHZ
1
Ta=-40 C
o
Ta=25 C
o
Ta=125 C
o
0.1 0.1
Cob[pF], OUTPUT CAPACITANCE
1 10
60
40
20
0 1 10 100
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
FJN5471
Typical Characteristics (Continued)
1.0
0.8
PC [W PO ERDISSIPATIO ], W N
0.6
0.4
0.2
0.0 0 25
o
50
75
100
125
150
Ta [ C], AM TTEM ATU BIEN PER RE
Figure 7. Power Derating
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
FJN5471
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
FJN5471
Package Dimensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor Corporation Rev. A1, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1

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